Low-temperature molecular beam epitaxy of GaAs: A theoretical investigation of antisite incorporation and reflection high-energy diffraction oscillations
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منابع مشابه
Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4
Carbon-doped GaAs and InP grown at low temperatures by molecular-beam epitaxy contain a high concentration of antisite defects which gives rise to ultrafast carrier trapping time and desirable radiation-hard properties. The use of CBr4 as the dopant source introduced significant bromine incorporation during low-temperature ~LT! growth. Incomplete dissociation of the CBr4 molecules gives rise to...
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Direct heteroepitaxial growth of InP layers on GaAs 001 wafers has been performed by solid-source molecular beam epitaxy assisted by monoatomic hydrogen H . The epitaxial growth has been carried out using a two-step method: for the initial stage of growth the temperature was as low as 200 °C and different doses of H were used; after this, the growth proceeded without H while the temperature was...
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Pulsed Laser Deposition in molecular-beam epitaxy environment (Laser-MBE) has been used to grow high quality BaCuO x /CaCuO 2 superlattices. In situ Reflection High Energy Electron Diffraction (RHEED) shows that the growth mechanism is 2-dimensional. Furthermore, weak but reproducible RHEED intensity oscillations have been monitored during the growth. Ex-situ x-ray diffraction spectra confirmed...
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The effects of a bismuth surfactant layer on the molecular beam epitaxy of GaAs and InxGa12xAs layers on GaAs ~001! were studied. The InxGa12xAs surface reconstruction changed from arsenic stabilized 234 to bismuth stabilized 133 for high enough bismuth fluxes and low enough substrate temperatures. Maintaining a bismuth stabilized surface during InxGa12xAs growth resulted in a larger number of ...
متن کاملOn the Phase Shift of Reflection High Energy Electron Diffraction Intensity Oscillations during Ge(001) Homoepitaxy by Molecular Beam Epitaxy
We have conducted a systematic investigation of the phase shift of the Reflection High Energy Electron Diffraction (RHEED) intensity oscillations during homoepitaxy of Ge(001) by molecular beam epitaxy for a wide range of diffraction conditions. Our results show that for small incidence angles with a beam azimuth several degrees away from the <110> crystallographic symmetry direction, the phase...
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تاریخ انتشار 2016